IAUZN08S7L177ATMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 IAUZN08S7L177ATMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN08S7L177ATMA1 IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 - 80V 35A OptiMOS 7 N-MOSFET | Infineon

IAUZN08S7L177ATMA1 ✓ 量产中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 IAUZN08S7L177ATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $1.60
Technology OptiMOS 7 N-channel power MOSFET —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 35 A (Tj) —
Power Dissipation (PD) 45 W (Tc) —
On-Resistance (RDS(on)) 17.7 mΩ max —
封装 PG-TSDSON-8-44 (S3O8, 3x3 mm²) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
Polarity N-Channel —
工作温度 -55C to +175C (Tj, automotive grade) —
Configuration Single —
Qualification AEC-Q101 automotive —
MSL 等级 1 (per JEDEC J-STD-020) 1
Lead-Free Yes —
RoHS 状态 Compliant —
Family Infineon OptiMOS 7 automotive, 80 V —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
工作结温 — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

浏览全部产品 创建 BOM 获取报价