IGB10N60TATMA1 vs IKD15N60RFATMA1 对比
详细并排对比 IGB10N60TATMA1 出自 Infineon 和 IKD15N60RFATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGB10N60TATMA1 | IKD15N60RFATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | IGBTs | IGBTs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.35 |
| Collector-Emitter Voltage (Vces) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 20 A | — |
| Continuous Collector Current (IC) at TC=100C | [DATA_NEEDED: IC at TC=100C] | — |
| Maximum Power Dissipation (Ptot) | 110 W | 250 W |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: VGES max] | +/-20 V |
| Technology | TRENCHSTOP IGBT3 with Fieldstop layer | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) |
| 封装 | PG-TO263-3-2 (D2Pak, TO-263AB) | PG-TO252-3 (DPAK), 3 pins (2 + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single discrete IGBT | — |
| 工作温度范围 | -40C to +175C | — |
| Storage Temperature Range | -55C to +175C | — |
| Soldering Temperature (reflow) | [DATA_NEEDED: reflow profile] | — |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 引脚数量 | 3 (Gate, Collector, Emitter) | — |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC at TC=25C) | — | 30 A |
| Continuous Collector Current (IC at TC=100C) | — | 15 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Gate-Emitter Threshold (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| VCE(sat) at IC=15A, VGE=15V | — | 1.5 V (typical) |
| 工作结温 | — | -40C to +175C |
| Integrated Anti-Parallel Diode | — | Yes (RC-Drives Fast, co-packaged) |
| Switching Speed Class | — | Hard-switching, RC-Drives Fast |
| Target Application | — | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) |
| RoHS Compliance | — | Compliant |