IGB10N60TATMA1 vs IKD15N60RFATMA1 비교
다음의 상세 나란히 비교: IGB10N60TATMA1 제조: Infineon 및 IKD15N60RFATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IGB10N60TATMA1 | IKD15N60RFATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | IGBTs | IGBTs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $1.35 |
| Collector-Emitter Voltage (Vces) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 20 A | — |
| Continuous Collector Current (IC) at TC=100C | [DATA_NEEDED: IC at TC=100C] | — |
| Maximum Power Dissipation (Ptot) | 110 W | 250 W |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: VGES max] | +/-20 V |
| Technology | TRENCHSTOP IGBT3 with Fieldstop layer | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) |
| 패키지 | PG-TO263-3-2 (D2Pak, TO-263AB) | PG-TO252-3 (DPAK), 3 pins (2 + tab) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single discrete IGBT | — |
| 동작 온도 범위 | -40C to +175C | — |
| Storage Temperature Range | -55C to +175C | — |
| Soldering Temperature (reflow) | [DATA_NEEDED: reflow profile] | — |
| MSL 레벨 | 1 | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| 핀 수 | 3 (Gate, Collector, Emitter) | — |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Continuous Collector Current (IC at TC=25C) | — | 30 A |
| Continuous Collector Current (IC at TC=100C) | — | 15 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: ICM value] |
| Gate-Emitter Threshold (VGE(th)) | — | [DATA_NEEDED: VGE(th) typical value] |
| VCE(sat) at IC=15A, VGE=15V | — | 1.5 V (typical) |
| 동작 접합 온도 | — | -40C to +175C |
| Integrated Anti-Parallel Diode | — | Yes (RC-Drives Fast, co-packaged) |
| Switching Speed Class | — | Hard-switching, RC-Drives Fast |
| Target Application | — | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) |
| RoHS Compliance | — | Compliant |