IGI60L1414B1MXUMA1 vs IGI60L5050B1MXUMA1 对比

详细并排对比 IGI60L1414B1MXUMA1 出自 Infineon 和 IGI60L5050B1MXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGI60L1414B1MXUMA1 IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΩ | Infineon

IGI60L1414B1MXUMA1 ✓ 量产中

规格对比

参数 IGI60L1414B1MXUMA1 IGI60L5050B1MXUMA1
品牌 Infineon Infineon
分类 Transistors MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.55 $3.85
Manufacturer Infineon Technologies —
Series CoolGaN™ (IGI family) —
Technology GaN (Gallium Nitride), enhancement-mode GaN (Gallium Nitride), enhancement-mode
Configuration Half-bridge (high-side + low-side switch) Half-bridge (high-side + low-side switch with integrated gate driver)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) 6.0 A —
On-Resistance (RDS(on)) 140 mΩ (per switch) —
Gate Driver Integrated (high-side + low-side) —
Level Shifter Integrated high-voltage level shifter —
Bootstrap Diode Integrated ultra-fast low-resistance —
Source Drive Current +0.29 A —
Sink Drive Current -0.7 A —
Turn-On/Turn-Off Application-configurable (external Rg) —
封装 PG-TFLGA-27-2 PG-TFLGA-27-2 (TFLGA-27), 6x8 mm
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C (junction 150 °C)
RoHS 状态 Compliant Compliant
Application Category SMPS, PFC, motor drive, Class-D audio —
On-State Resistance (RDS(on)) per switch — 500 mΩ (0.5 Ω)
Number of GaN Switches — 2
Gate Driver Source Current — +0.29 A
Gate Driver Sink Current — -0.7 A
Integrated Bootstrap Diode — Yes (ultra-fast, low-resistance)
Turn-on / Turn-off dV/dt — Application-configurable (via gate resistor)
引脚数量 — 27
Reach Status — Compliant
Lead-Free — Yes
Target Applications — Totem-pole PFC, LLC converters, HF SMPS, BLDC drives

数据手册与资源

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