IGI60L1414B1MXUMA1 vs IGI60L5050B1MXUMA1 Comparison
Detailed side-by-side comparison of IGI60L1414B1MXUMA1 by Infineon and IGI60L5050B1MXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGI60L1414B1MXUMA1
IGI60L1414B1MXUMA1 - 600V GaN Half-Bridge 140mΞ© | Infineon
IGI60L1414B1MXUMA1 β ActiveInfineon
IGI60L5050B1MXUMA1
IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
IGI60L5050B1MXUMA1 β ActiveSpecification Comparison
| Parameter | IGI60L1414B1MXUMA1 | IGI60L5050B1MXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Transistors | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.55 | $3.85 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolGaNβ’ (IGI family) | β |
| Technology | GaN (Gallium Nitride), enhancement-mode | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-bridge (high-side + low-side switch) | Half-bridge (high-side + low-side switch with integrated gate driver) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) | 6.0 A | β |
| On-Resistance (RDS(on)) | 140 mΞ© (per switch) | β |
| Gate Driver | Integrated (high-side + low-side) | β |
| Level Shifter | Integrated high-voltage level shifter | β |
| Bootstrap Diode | Integrated ultra-fast low-resistance | β |
| Source Drive Current | +0.29 A | β |
| Sink Drive Current | -0.7 A | β |
| Turn-On/Turn-Off | Application-configurable (external Rg) | β |
| Package | PG-TFLGA-27-2 | PG-TFLGA-27-2 (TFLGA-27), 6x8 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40 Β°C to +125 Β°C (junction 150 Β°C) |
| RoHS Status | Compliant | Compliant |
| Application Category | SMPS, PFC, motor drive, Class-D audio | β |
| On-State Resistance (RDS(on)) per switch | β | 500 mΞ© (0.5 Ξ©) |
| Number of GaN Switches | β | 2 |
| Gate Driver Source Current | β | +0.29 A |
| Gate Driver Sink Current | β | -0.7 A |
| Integrated Bootstrap Diode | β | Yes (ultra-fast, low-resistance) |
| Turn-on / Turn-off dV/dt | β | Application-configurable (via gate resistor) |
| Pin Count | β | 27 |
| Reach Status | β | Compliant |
| Lead-Free | β | Yes |
| Target Applications | β | Totem-pole PFC, LLC converters, HF SMPS, BLDC drives |