IGI65D1414A3MSXUMA1 vs BSC076N04NDATMA1 对比

详细并排对比 IGI65D1414A3MSXUMA1 出自 Infineon 和 BSC076N04NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ 量产中

规格对比

参数 IGI65D1414A3MSXUMA1 BSC076N04NDATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.95 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN™ HEMT —
Configuration Half-Bridge (2 FETs in QFN-32, high-side + low-side) Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (V_DS, max) 650 V —
On-Resistance (R_DS(on), typ) 140 mΩ per FET —
Continuous Drain Current 13.7 A (per Newark listing) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Technology Enhancement-mode GaN HEMT (eMode) Trench MOSFET (OptiMOS 3)
封装 PG-TIQFN-32-1 (QFN-32, 6x8 mm) —
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature range] —
Total Gate Charge (Q_G, typ) [DATA_NEEDED: Q_G total] —
Output Charge (Q_OSS) [DATA_NEEDED: Q_OSS value] —
Reverse Recovery Charge (Q_RR) 0 nC (intrinsic to GaN HEMT, no body diode recovery) —
Thermal Resistance (R_thJA) [DATA_NEEDED: R_thJA value] —
Typical Applications AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting —
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS Compliance Compliant —
Series — OptiMOS 3
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
工作结温 — -55 C to +175 C
封装 / 外壳 — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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