IGI65D1414A3MSXUMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IGI65D1414A3MSXUMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΞ© QFN-32 | Infineon
IGI65D1414A3MSXUMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IGI65D1414A3MSXUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaNβ’ HEMT | β |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (V_DS, max) | 650 V | β |
| On-Resistance (R_DS(on), typ) | 140 mΞ© per FET | β |
| Continuous Drain Current | 13.7 A (per Newark listing) | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| Technology | Enhancement-mode GaN HEMT (eMode) | Trench MOSFET (OptiMOS 3) |
| Package | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | β |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | β |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | β |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | β |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Compliance | Compliant | β |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |