IGLR70R270D2SXUMA1 vs IGL65R080D2XUMA1 对比
详细并排对比 IGLR70R270D2SXUMA1 出自 Infineon 和 IGL65R080D2XUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ 量产中规格对比
| 参数 | IGLR70R270D2SXUMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.13 | $1.97 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN™ G5 | CoolGaN G5 |
| Technology | Gallium Nitride (GaN) HEMT, enhancement-mode | GaN-on-Si, 200 mm wafer |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | 650 V |
| Continuous Drain Current (ID, Tc) | 7.3 A | 18 A |
| Power Dissipation (PD, Tc) | 28 W | 81 W |
| On-State Resistance (RDS(on), typ.) | 270 mΩ | — |
| 封装 | PG-TSON-8-8 (ThinPAK) | PG-TSON-8-U06 (ThinPAK 8x8) |
| 安装类型 | Surface Mount | Surface Mount, wettable flank |
| Gate Drive | 0 to 12 V (enhancement-mode, internal gate diode) | — |
| Wafer Process | 200 mm (8-inch) GaN-on-Si | — |
| RoHS 状态 | Compliant | Compliant |
| 工作温度范围 | -40C to +150C (junction) | -55 °C to +150 °C (TJ) |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) | — |
| 晶体管类型 | — | N-Channel GaN HEMT (enhancement-mode) |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| MSL 等级 | — | 1 (per JEDEC J-STD-020, where stated) |