IGW30N60H3FKSA1 vs IHW40N120R5XKSA1 对比

详细并排对比 IGW30N60H3FKSA1 出自 Infineon 和 IHW40N120R5XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IGW30N60H3FKSA1 IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon

IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon

IGW30N60H3FKSA1 ✓ 量产中
Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 量产中

规格对比

参数 IGW30N60H3FKSA1 IHW40N120R5XKSA1
品牌 Infineon Infineon
分类 IGBTs IGBTs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.49 $3.50
Manufacturer Infineon Technologies —
Series TRENCHSTOP IGBT3 —
IGBT Type Trench Field Stop —
Collector-Emitter Breakdown Voltage (VCE, max) 600 V —
Continuous Collector Current (IC, TC=25°C) 60 A —
Continuous Collector Current (IC, TC=100°C) [DATA_NEEDED: IC at TC=100°C] —
Pulsed Collector Current (ICM) [DATA_NEEDED: ICM value] 160 A
Maximum Power Dissipation (Ptot) 187 W 394 W
Gate-Emitter Voltage (VGE) ±20 V (max) +/-20 V
Gate-Emitter Threshold Voltage (VGE(th), typ) [DATA_NEEDED: VGE(th) typical] —
VCE(sat) at IC=30 A, VGE=15 V, Tj=25°C [DATA_NEEDED: VCE(sat) value] —
Turn-Off Switching Energy (Eoff) [DATA_NEEDED: Eoff value] —
工作结温范围 -40 °C to +175 °C —
封装 TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab TO-247-3 (PG-TO247-3) through-hole
Anti-Parallel Diode None (co-packaged without diode) —
安装类型 Through Hole Through Hole
RoHS 状态 Compliant —
Collector-Emitter Voltage (VCE) — 1200 V
Continuous Collector Current (IC, TC=25C) — 80 A
VCE(sat) at IC=40A, VGE=15V, Tj=25C — [DATA_NEEDED: typical VCE(sat) value]
Integrated Anti-Parallel Diode — Yes (monolithic reverse-conducting)
Technology — Trench Field Stop, Reverse-Conducting RC-H5
工作结温 — -40C to +175C
Storage Temperature — -55C to +150C
Soldering Temperature (max 10s) — 260 C
Switching Application — Resonant / soft switching (induction cooking optimized)
RoHS Compliance — Compliant
无卤 — Yes
MSL 等级 — N/A (through-hole)

数据手册与资源

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