IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon
料号： IGW30N60H3FKSA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.12 | $4.12 |
| 10 | $3.71 | $37.10 |
| 100 | $3.28 | $328.00 |
| 500 | $2.85 | $1,425.00 |
| 1,000 | $2.49 | $2,490.00 |
IGW30N60H3FKSA1 概述
An IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines a MOSFET gate drive with a bipolar collector output stage. Within the discrete power semiconductor taxonomy, IGBTs sit between MOSFETs (faster, lower current) and thyristors (slower, higher current). The TRENCHSTOP IGBT3 family specifically optimizes the trade-off between conduction loss (VCE(sat)) and switching loss (Eoff), making it well-suited to hard-switched converters up to roughly 100 kHz.
Key features include a 600 V collector-emitter breakdown voltage, a 60 A continuous collector current rating (TC = 25 °C), a low VCE(sat) typical of Trench Field Stop cells, and a square reverse-bias safe operating area (RBSOA) that is essentially independent of collector current up to 60 A. The part is co-packaged without an anti-parallel diode, simplifying designs where a separate ultrafast rectifier is preferred.
The Trench Field Stop cell structure creates a thin, lightly-doped N- drift region terminated by a field-stop buffer, which simultaneously shrinks Eoff and tightens the fall-time distribution. This yields low turn-off losses and predictable switching behaviour across the full current range, simplifying snubber design and EMI filtering.
Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, industrial motor drives, induction heating, and PFC boost stages operating from 230 V or 400 V rectified mains. Designers commonly pair the IGW30N60H3FKSA1 with gate driver ICs such as 1EDN7550B or 2ED2106S06F and a dedicated antiparallel diode.
When designing with this part, gate-drive voltage must swing from 0 V (or negative bias) to +15 V to fully enhance the channel and minimize VCE(sat); a gate resistor of 5-20 Ω controls ringing and dV/dt-induced turn-on. PCB layout must keep the gate loop area minimal to preserve the MOSFET-like turn-off behaviour.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with all parameters verified against Infineon's published sources.
直接替换替代料： IGW30N60H3FKSA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IGW30N60H3FKSA1 （相同外形与封装尺寸） ——差异在于 Gate-Emitter Voltage (VGE), Package, Mounting Type, Collector-Emitter Voltage (VCE), Maximum Power Dissipation (Ptot).
快速对比工具——选择替代料号进行并排对比：
IGW30N60H3
✅ 直接替换📋 参考替代料（不在目录中）
IKW30N60H3
✅ 直接替换📋 参考替代料（不在目录中）
IGW40N60H3FKSA1
✅ 直接替换📋 参考替代料（不在目录中）
IKW40N60H3FKSA1
✅ 直接替换📋 参考替代料（不在目录中）
IGW50N60H3FKSA1
✅ 直接替换📋 参考替代料（不在目录中）
IKW50N60H3FKSA1
✅ 直接替换📋 参考替代料（不在目录中）
IGW30N60H3FKSA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 |
| IGBT Type | Trench Field Stop |
| Collector-Emitter Breakdown Voltage (VCE, max) | 600 V |
| Continuous Collector Current (IC, TC=25°C) | 60 A |
| Maximum Power Dissipation (Ptot) | 187 W |
| Gate-Emitter Voltage (VGE) | ±20 V (max) |
| 工作结温范围 | -40 °C to +175 °C |
| 封装 | TO-247 (PG-TO247-3-1) through-hole, 3 pins + tab |
| Anti-Parallel Diode | None (co-packaged without diode) |
| 安装类型 | Through Hole |
| RoHS 状态 | Compliant |
IGW30N60H3FKSA1 引脚配置
| 引脚 1 | Gate (G) — MOS gate input; connect to gate driver output through gate resistor (typically 5-20 Ω) |
| 引脚 2 | Collector (C) — Main current terminal; connected to the high-voltage DC bus positive rail through load |
| 引脚 3 | Emitter (E) — Return path for collector current; typically tied to gate-driver return and Kelvin source if available |
| 引脚 TAB | Collector (TAB) — Mounting tab electrically common with Collector (pin 2); must be isolated from heatsink with TIM plus insulator |
Forward Bias 安全工作区 (FBSOA)
典型应用
IGW30N60H3FKSA1 适用于 6 应用s: Uninterruptible Power Supplies (UPS), Solar String Inverters, Industrial Motor Drives (Low-Voltage AC Drives), Induction Heating Cooktops and Welding Inverters, Power Factor Correction (PFC) Boost Stages, Switched-Mode Power Supply Inverter Stages.
Uninterruptible Power Supplies (UPS)
The IGW30N60H3FKSA1 is well suited to the inverter and PFC stages of double-conversion UPS systems operating from a 400 V rectified-bus. Its 600 V collector-emitter breakdown provides safe margin above the 565 V peak seen on European three-phase rectified rails, while the TRENCHSTOP IGBT3 cell structure delivers MOSFET-like turn-off switching that simplifies snubber design in the high-frequency leg. Designers pair it with an external ultrafast freewheeling diode such as IDH04G65C6 in the half-bridge, and a gate driver such as 1EDN7550B or 2ED2106S06F that swings the gate from 0 V to +15 V. The 187 W power dissipation rating supports continuous 30 A conduction in a properly heatsinked TO-247 package.
推荐
Solar String Inverters
In residential and small-commercial string inverters converting 600-1000 V DC photovoltaic input to grid-tied AC, the IGW30N60H3FKSA1 serves as the primary switching element in the H4 or HERIC topology inverter stage. The TRENCHSTOP IGBT3 cell structure yields low Eoff losses at 16-32 kHz switching frequencies typical of single-phase PV inverters, which improves CEC-weighted efficiency. Its 600 V rating comfortably handles 600 V DC inputs and supports transformerless topologies with proper derating. The TO-247 through-hole package enables conventional PCB-mount heatsinking and easy replacement during field service, a critical factor for solar installations with 25-year lifetime expectations.
推荐
Industrial Motor Drives (Low-Voltage AC Drives)
The IGW30N60H3FKSA1 is a strong fit for the inverter section of low-voltage (380-480 V AC mains) variable-frequency drives rated up to roughly 11 kW. The 600 V breakdown provides a 100 V safety margin above the rectified 678 V peak from a 480 V line, while the 30 A continuous current rating supports motors up to 7.5 kW at typical 4 kHz PWM. The TRENCHSTOP IGBT3 technology yields predictable switching losses across the full current range, enabling fixed dead-time design without adaptive compensation. In typical VFD schematics, the IGBT co-exists with a separate diode (e.g. IDD04SG60C) and uses a TLD21421EP or 6EDL04N02PR gate driver for reinforced isolation.
推荐
Induction Heating Cooktops and Welding Inverters
Induction cooktops and small welding inverters operate at 20-100 kHz resonant switching frequencies where the TRENCHSTOP IGBT3 cell structure of the IGW30N60H3FKSA1 excels. Its square reverse-bias safe operating area (RBSOA) supports hard-switched turn-off of 60 A pulses at the inductor-resonant zero-voltage transitions, simplifying control loop design. The TO-247 package's 187 W power dissipation is sufficient for cooktop power levels up to roughly 3.5 kW per element at full DC-bus current. Designers typically use a half-bridge configuration with a co-packaged or discrete antiparallel diode, driven by a specialized resonant-mode controller.
推荐
Power Factor Correction (PFC) Boost Stages
The IGW30N60H3FKSA1 is widely used as the boost switch in continuous-conduction-mode (CCM) PFC front ends for industrial SMPS, particularly at power levels above 3 kW where silicon IGBTs outperform 600 V superjunction MOSFETs on conduction loss. The 600 V breakdown handles 385-400 V DC-link rails in 3-phase PFC stages, and the TRENCHSTOP IGBT3 cell geometry delivers predictable switching losses at 40-70 kHz switching frequencies. The TO-247 package offers the thermal headroom required for continuous 30 A boost current with a 1-2 °C/W heatsink. PFC designs benefit from pairing the IGBT with a SiC boost diode (e.g. IDM08G120C5) for hard-switched efficiency above 40 kHz.
推荐
Switched-Mode Power Supply Inverter Stages
In higher-power industrial SMPS topologies (full-bridge, phase-shifted full-bridge, or two-transistor forward converters above 5 kW), the IGW30N60H3FKSA1 serves as the primary side switching element when operating from 380-480 V AC inputs. Its 600 V rating covers rectified bus voltages up to roughly 565 V DC with derating, and its TRENCHSTOP IGBT3 architecture minimizes Eoff losses at the 50-100 kHz switching frequencies common to high-density telecom and server power supplies. The TO-247 package and through-hole mounting simplify thermal management and PCB layout for the primary-side current loop. Engineers often pair it with an IGBT-intelligent power module gate driver and a current-mode PWM controller.
推荐
推荐产品汇总
工程参考数据： IGW30N60H3FKSA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IGW30N60H3 | IKW30N60H3 | IGW40N60H3FKSA1 | IGW50N60H3FKSA1 | IKW50N60H3FKSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) | TO-247 (PG-TO247-3-1) |
| Collector-Emitter Breakdown (VCES) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (TC=25°C) | 60 A | 60 A | 60 A | 80 A | 100 A | 100 A |
| Nominal Current Class (Family) | 30 A | 30 A | 30 A | 40 A | 50 A | 50 A |
| Maximum Power Dissipation | 187 W | 187 W | 187 W | 306 W | 333 W | 333 W |
| Technology | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) | TRENCHSTOP IGBT3 (Trench Field Stop) |
| Co-Packaged Anti-Parallel Diode | No | No | Yes | No | No | Yes |
| Ordering Code Suffix | FKSA1 (tube packing) | Bare (no suffix; tube only) | Bare (no suffix; tube only) | FKSA1 (tube packing) | FKSA1 (tube packing) | FKSA1 (tube packing) |
关键差异点
- Discrete (no co-packaged diode) version of TRENCHSTOP IGBT3 family （对比 IKW30N60H3)
- Lower conduction loss than 600V MOSFETs at high current （对比 IPB60R190C6ATMA1 (600V MOSFET))
- MOSFET-like turn-off switching for predictable EMC （对比 Older IRG4PF50W (gen-2 PT-IGBT))
设计说明
At continuous 30 A conduction with VCE(sat) of 2.0 V typical and a switching frequency of 16 kHz, the per-device conduction loss is roughly 60 W plus switching loss. The TO-247 package has theta_JC of approximately 0.5 °C/W, so a heatsink with thermal resistance below 0.5 °C/W is required to keep junction temperature below 125 °C at 30 A continuous current. Always use a silicone thermal pad (not ceramic, which adds 0.5 °C/W) and verify torque on the mounting screw (0.7-0.9 N·m) for repeatable thermal performance.
The gate-drive loop (gate driver output → gate resistor → gate → emitter → back to driver return) must be kept physically short and narrow to avoid parasitic inductance that causes gate ringing and possible dV/dt-induced turn-on. Estimated: a 1 nH parasitic inductance at 5 A/ns dI/dt produces 5 V of ringing, which can exceed VGE(th) and falsely re-trigger the IGBT. Place the gate resistor within 5 mm of the gate pin and use a wide, short emitter-return trace. A Kelvin source pin is not available on the TO-247, so the gate-driver return must be tied directly to the IGBT emitter pin, not to the power copper pour.
Do not drive the gate above +20 V (VGE absolute maximum); many gate-driver ICs default to +12 V output which is safe. Never leave the gate floating during power-up - if the driver is unpowered, a single dV/dt on the collector can charge the Miller capacitance and turn the IGBT partially on, leading to shoot-through. Add a 10 kΩ gate-to-emitter pulldown resistor whenever the driver is in high-impedance state. Finally, verify VCE(sat) at the actual junction temperature, not just room temperature - VCE(sat) typically increases by 25% between 25 °C and 150 °C, which can shift the thermal design margin significantly.
合规信息
RoHS compliant per Infineon product page; AEC-Q100 not qualified (industrial grade); halogen-free status not explicitly stated in verified web data and marked unknown. Conflict-minerals compliance assumed per Infineon's standard supplier declarations.
