IKD06N60RATMA1 vs IKD04N60RATMA1 对比

详细并排对比 IKD06N60RATMA1 出自 Infineon 和 IKD04N60RATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IKD06N60RATMA1 IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 ✓ 量产中
Infineon
IKD04N60RATMA1 IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon

IKD04N60RATMA1 ✓ 量产中

规格对比

参数 IKD06N60RATMA1 IKD04N60RATMA1
品牌 Infineon Infineon
分类 IGBTs IGBTs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.92
晶体管类型 IGBT - Trench Field Stop with anti-parallel diode IGBT - Trench Field Stop with integrated diode
Configuration Single with built-in diode Single
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25C 12 A 8 A
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] —
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
工作温度范围 -40C to +150C (junction) -40C to +150C
封装 PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
安装类型 Surface Mount Surface Mount
引脚数量 3 (2 + Tab) 3 (2 leads + tab)
RoHS 状态 Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — RC-Drives
Collector-Emitter Voltage (VCES) — 600 V
Power Dissipation (PD) at TC=25C — 75 W
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: gate-emitter voltage rating]
VCE(sat) at IC=4A, VGE=15V — [DATA_NEEDED: VCE(sat) typical at 4A]
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th)]
Integrated Anti-Parallel Diode — Yes
MSL 等级 — 1
Technology Target — Consumer drives / motor control

数据手册与资源

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