IKD06N60RATMA1 vs IKD04N60RATMA1 Vergleich

Detaillierter Direktvergleich von IKD06N60RATMA1 von Infineon und IKD04N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IKD06N60RATMA1 IKD04N60RATMA1
Marke Infineon Infineon
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,89 $0,92
Transistortyp IGBT - Trench Field Stop with anti-parallel diode IGBT - Trench Field Stop with integrated diode
Configuration Single with built-in diode Single
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25C 12 A 8 A
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] —
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
Betriebstemperaturbereich -40C to +150C (junction) -40C to +150C
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (2 + Tab) 3 (2 leads + tab)
RoHS-Status Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — RC-Drives
Collector-Emitter Voltage (VCES) — 600 V
Power Dissipation (PD) at TC=25C — 75 W
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: gate-emitter voltage rating]
VCE(sat) at IC=4A, VGE=15V — [DATA_NEEDED: VCE(sat) typical at 4A]
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th)]
Integrated Anti-Parallel Diode — Yes
MSL-Level — 1
Technology Target — Consumer drives / motor control

Datenblätter & Ressourcen

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