IPB020N10N5LFATMA1 vs IAUC120N06S5L011ATMA1 对比
详细并排对比 IPB020N10N5LFATMA1 出自 Infineon 和 IAUC120N06S5L011ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ 量产中Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ 量产中规格对比
| 参数 | IPB020N10N5LFATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.62 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | OptiMOS 5 60 V (S5 generation) |
| Technology | N-Channel Enhancement-Mode Power MOSFET | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (Tc) | 176 A | — |
| Silicon-Limited Drain Current | 289 A | — |
| Package-Limited Drain Current | 120 A | — |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | — |
| On-State Resistance RDS(on) max | 2.0 mΩ | — |
| Total Power Dissipation (Tc) | 313 W | — |
| 封装 | PG-TO263-3 (D2PAK) | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +175 °C | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Marking Code | 020N10LF | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) | — | 310 A (Tj), 120 A marketing |
| R_DS(on) max | — | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] |
| Power Dissipation (P_D) | — | 188 W at T_C = 25 °C |
| 工作结温 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Energy Rated | — | Yes (EAS) |