IPB024N10N5ATMA1 vs IPB031N08N5ATMA1 对比
详细并排对比 IPB024N10N5ATMA1 出自 Infineon 和 IPB031N08N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB024N10N5ATMA1 | IPB031N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.86 | $2.62 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | [DATA_NEEDED: Qg total] |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| 工作温度范围 | -55C to +175C (junction) | -55 C to +175 C |
| 封装 | PG-TO263-7 (D2PAK-7) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | — |
| 无卤 | Yes (per Infineon product family policy) | — |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) | — | 120 A (Tc) |
| Power Dissipation (PD) Max | — | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | — | 3.1 mOhm (VGS=10V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| 引脚数量 | — | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | — | Drain (electrically connected to pin) |
| Automotive Qualified | — | Yes (per Arrow listing) |