IPB024N10N5ATMA1 vs IPB031N08N5ATMA1 비교
다음의 상세 나란히 비교: IPB024N10N5ATMA1 제조: Infineon 및 IPB031N08N5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB024N10N5ATMA1 | IPB031N08N5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.86 | $2.62 |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | [DATA_NEEDED: Qg total] |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| 동작 온도 범위 | -55C to +175C (junction) | -55 C to +175 C |
| 패키지 | PG-TO263-7 (D2PAK-7) | PG-TO263-3 (D2PAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (unlimited floor life at <30C/85% RH) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel (13-inch reel) | — |
| 할로겐 프리 | Yes (per Infineon product family policy) | — |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) | — | 120 A (Tc) |
| Power Dissipation (PD) Max | — | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | — | 3.1 mOhm (VGS=10V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| 핀 수 | — | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | — | Drain (electrically connected to pin) |
| Automotive Qualified | — | Yes (per Arrow listing) |