IPB60R040CFD7ATMA1 vs IPB014N06NATMA1 对比

详细并排对比 IPB60R040CFD7ATMA1 出自 Infineon 和 IPB014N06NATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 量产中

规格对比

参数 IPB60R040CFD7ATMA1 IPB014N06NATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.19 $2.10
Manufacturer Infineon Technologies —
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功耗(TC=25°C) 227 W —
工作温度范围 -55°C to +150°C —
封装 PG-TO263-3-2 (D2PAK) PG-TO263-7 (D2PAK-7)
安装类型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等级 1 —
RoHS 状态 Compliant —
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Transistor Polarity — N-Channel
Continuous Drain Current (ID) at Ta — 34 A
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 214 W
On-Resistance RDS(on) max — 1.4 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
工作结温 — -55 °C to +175 °C
Avalanche Rating — 100% avalanche tested
Qualification — JEDEC qualified for target applications
Primary Application — Synchronous rectification, motor control

数据手册与资源

浏览全部产品 创建 BOM 获取报价