IPB60R040CFD7ATMA1 vs IPB014N06NATMA1 비교
다음의 상세 나란히 비교: IPB60R040CFD7ATMA1 제조: Infineon 및 IPB014N06NATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB60R040CFD7ATMA1 | IPB014N06NATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $5.19 | $2.10 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| 전력 손실 (TC=25°C) | 227 W | — |
| 동작 온도 범위 | -55°C to +150°C | — |
| 패키지 | PG-TO263-3-2 (D2PAK) | PG-TO263-7 (D2PAK-7) |
| 실장 유형 | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL 레벨 | 1 | — |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Transistor Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 34 A |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 214 W |
| On-Resistance RDS(on) max | — | 1.4 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| 동작 접합 온도 | — | -55 °C to +175 °C |
| Avalanche Rating | — | 100% avalanche tested |
| Qualification | — | JEDEC qualified for target applications |
| Primary Application | — | Synchronous rectification, motor control |