IPB90N06S4L04ATMA2 vs IRF2907ZSTRLPBF 对比

详细并排对比 IPB90N06S4L04ATMA2 出自 Infineon 和 IRF2907ZSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 ✓ 量产中

规格对比

参数 IPB90N06S4L04ATMA2 IRF2907ZSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $1.55
Manufacturer Infineon Technologies —
Part Number IPB90N06S4L04ATMA2 —
Technology OptiMOS T2, N-channel enhancement mode IR HEXFET / IR MOSFET
Drain-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D, Tc) 90 A —
Pulsed Drain Current (I_D,pulse) 360 A —
Power Dissipation (P_D, Tc) 150 W —
On-State Resistance R_DS(on) (typ @ VGS=10V) 3.4 mΩ —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th)] —
Gate-Source Voltage (V_GS) ±20 V —
工作温度范围 -55 °C to +175 °C —
封装 PG-TO263-3-2 (D2PAK) D2PAK (TO-263AB) surface mount
安装类型 Surface Mount Surface Mount (SMD)
MSL 等级 MSL1 (unlimited floor life) —
Peak Reflow Temperature 260 °C —
AEC-Q101 Qualification Qualified (automotive grade) —
Avalanche Tested 100% avalanche-tested —
RoHS / Halogen-Free Yes (Green Product) —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
连续漏极电流(TC=25°C) — 170 A
连续漏极电流(TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
工作结温 — -55 C to +175 C
引脚数量 — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)
RoHS 状态 — Compliant
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

数据手册与资源

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