IPD082N10N3GATMA1 vs BSC0901NSATMA1 对比

详细并排对比 IPD082N10N3GATMA1 出自 Infineon 和 BSC0901NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPD082N10N3GATMA1 BSC0901NSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.14 $0.78
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (Trench N-Channel) N-Channel Trench MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
工作结温 -55°C to +175°C —
封装 / 外壳 PG-TO252-3 (DPAK), surface mount —
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) —
RoHS 状态 Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
MSL 等级 1 (per JEDEC J-STD-020) —
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
工作温度范围 — -55C to +150C
封装 — TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
湿敏等级(MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

数据手册与资源

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