IPD090N03LGATMA1 vs IPD90N03S4L02ATMA1 对比

详细并排对比 IPD090N03LGATMA1 出自 Infineon 和 IPD90N03S4L02ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 ✓ 量产中

规格对比

参数 IPD090N03LGATMA1 IPD90N03S4L02ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $0.58
FET Type N-Channel N-Channel
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 40 A —
Continuous Drain Current (Id) @ Tc=100C [DATA_NEEDED: Id at 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Id] —
Maximum Power Dissipation (Pd) @ Tc=25C 42 W —
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A 9 mOhm (typical) —
On-State Resistance (Rds(on)) @ Vgs=4.5V [DATA_NEEDED: Rds(on) at 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
工作温度范围 -55C to +175C (junction) —
封装 PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, surface mount)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS 状态 Compliant Compliant (Green Package)
Technology Family OptiMOS 30V —
Configuration Single —
Technology — MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 90 A
Power Dissipation (PD) at Tc — 136 W
RDS(on) Max at VGS=10 V — 2.2 mΩ
RDS(on) Max at VGS=4.5 V — [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) — 4.5 V to 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical value]
工作结温 — -55°C to +175°C
Avalanche Rated — 100% Avalanche tested
Automotive Qualification — AEC-Q101 qualified
Series — OptiMOS-T2

数据手册与资源

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