IPD11DP10NMATMA1 vs IPD50N06S409ATMA2 对比
详细并排对比 IPD11DP10NMATMA1 出自 Infineon 和 IPD50N06S409ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD11DP10NMATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.49 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 60 V |
| Continuous Drain Current (Ta) | 3.4 A | — |
| Continuous Drain Current (Tc) | 22 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 125 W | — |
| On-Resistance RDS(on) max at VGS=10V | 111 mΩ | — |
| On-Resistance RDS(on) at ID=18A, VGS=10V | 111 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ at 1.7 mA) | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) at VGS=10V | 74 nC | — |
| Input Capacitance (Ciss) | 230 pF | — |
| Output Capacitance (Coss) | 63 pF | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ Trench | N-Channel MOSFET (OptiMOS) |
| RoHS 状态 | Compliant | Compliant |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| 工作结温 | — | -55 °C to +175 °C |
| 引脚数量 | — | 3 (2 + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |