IPD30N06S215ATMA2 vs BTS441RGATMA1 对比

详细并排对比 IPD30N06S215ATMA2 出自 Infineon 和 BTS441RGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD30N06S215ATMA2 IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 - 55V 30A N-Ch OptiMOS MOSFET | Infineon

IPD30N06S215ATMA2 ✓ 量产中
Infineon
BTS441RGATMA1 BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 - 17A Smart High-Side Power Switch TO-263-5

BTS441RGATMA1 ✓ 量产中

规格对比

参数 IPD30N06S215ATMA2 BTS441RGATMA1
品牌 Infineon Infineon
分类 MOSFETs Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $2.21
Manufacturer Infineon Technologies Infineon Technologies AG
Part Family OptiMOS Power MOSFET —
晶体管类型 N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID, Tc) 30 A —
Power Dissipation (PD, Tc) 136 W —
封装 / 外壳 PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) —
安装类型 Surface Mount Surface Mount
工作温度 -55 C to +175 C (junction) —
Automotive Qualification AEC-Q101 qualified —
MSL 等级 MSL1 (up to 260 C peak reflow) —
Avalanche Tested 100% avalanche tested —
Lead-Free / RoHS Green package (lead free), RoHS compliant —
Gate Threshold Type Logic-level compatible —
Packing Tape & Reel (T/R) —
Part Number — BTS441RGATMA1
Switch Type — 1:1 N-Channel High-Side
输出数量 — 1
Continuous Load Current — 17 A
拓扑 — Smart High-Side Switch
Input Type — CMOS-compatible, ground referenced
Diagnostics — Yes (fault feedback)
Technology — Smart SIPMOS (N-channel vertical FET + charge pump)
封装 — PG-TO263-5-2 (TO-263-5)
引脚数 — 5
Operating Voltage Range — [DATA_NEEDED: Vbb range, e.g. 6V-42V]
On-State Resistance (Rds(on)) — [DATA_NEEDED: Rds(on) at 25 C]
Over-Current Protection — Yes (integrated)
Thermal Protection — Yes (overtemperature shutdown)
Over-Voltage Protection — Yes (inductive load clamping)
Automotive Qualified — Yes (AEC-Q100 automotive grade)
RoHS 状态 — Compliant
Tape and Reel Quantity — 1000 (per reel)

数据手册与资源

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