IPD30N10S3L34ATMA2 vs IPD082N10N3GATMA1 对比
详细并排对比 IPD30N10S3L34ATMA2 出自 Infineon 和 IPD082N10N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ 量产中规格对比
| 参数 | IPD30N10S3L34ATMA2 | IPD082N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $1.14 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 工作结温 | -55 C to +175 C | -55°C to +175°C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS 3 (Trench N-Channel) |
| Automotive Qualification | AEC-Q101 | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Part Number | — | IPD082N10N3GATMA1 |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK), surface mount |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |