IPD30N10S3L34ATMA2 - 100V 30A N-Ch OptiMOS MOSFET | Infineon
料号： IPD30N10S3L34ATMA2 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.05 | $1,050.00 |
| 2,500 | $0.92 | $2,300.00 |
IPD30N10S3L34ATMA2 概述
A power MOSFET is a voltage-controlled semiconductor switch used to modulate or switch DC loads in power electronics. OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low on-state resistance per unit area, fast body diode, and low gate charge. Within the broader taxonomy, the IPD30N10S3L34ATMA2 belongs to the N-channel enhancement-mode power MOSFET family, which sits inside the discrete semiconductor hierarchy alongside IGBTs and BJTs. The PG-TO252-3-11 (DPAK) package category belongs to the surface-mount discrete family, descended from through-hole TO-220 / TO-247 packages.
Key features include a maximum continuous drain current of 30 A at Tc, 57 W power dissipation (Tc), threshold voltage V_GS(th) of 2.4 V max, and an operating junction temperature range of -55 C to +175 C. The low 31 mOhm R_DS(on) at 10 V V_GS minimizes conduction losses in high-current paths, while the 31 nC total gate charge supports switching frequencies up to several hundred kHz. The combination of low Qg and low R_DS(on) yields an excellent Figure-of-Merit (FOM = R_DS(on) x Qg) for this voltage class.
The device is fabricated using Infineon's OptiMOS-T trench process, which achieves very low specific on-resistance by minimizing cell pitch while preserving avalanche ruggedness. The intrinsic body diode is robust enough for hard-switching bridge topologies, with dv/dt capability suitable for motor-drive half-bridges. The DPAK package offers a low thermal resistance path through the drain tab, enabling direct PCB cooling when the copper pad area is sized appropriately.
Typical applications include automotive 12 V / 24 V load switching, electric power steering (EPS), DC-DC converter high-side switches, motor drive H-bridges, solenoid and relay drivers, and battery management systems. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics where reliability under thermal cycling and vibration is mandatory.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement and minimal R_DS(on). The drain tab must be soldered to a copper pour sized to keep junction temperature below 150 C under worst-case load. Use a gate-source resistor of 10-100 kOhm to prevent unwanted turn-on from Miller-induced dv/dt coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on a single manufacturer product page.
直接替换替代料： IPD30N10S3L34ATMA2 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IPD30N10S3L34ATMA2 （相同外形与封装尺寸） ——差异在于 Technology, Package, MSL Level, Operating Temperature Range, Part Number.
快速对比工具——选择替代料号进行并排对比：
IPD30N10S3L34ATMA1
✅ 直接替换✓ 有现货
$0.38 / 个
查看数据手册 →IPD70N10S312ATMA2
✅ 直接替换✓ 有现货
$0.69 / 个
查看数据手册 →IPD33CN10NGATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.32 / 个
查看数据手册 →IPD90N06S407ATMA2
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.84 / 个
查看数据手册 →IPD082N10N3GATMA1
✅ 直接替换✓ 有现货
$1.14 / 个
查看数据手册 →IPD30N10S3L34ATMA2 最大额定值与电气特性
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, Tc) | 30 A |
| Pulsed Drain Current (I_DM) | 180 A |
| Power Dissipation (P_D, Tc) | 57 W |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | 2.4 V |
| Total Gate Charge (Qg) max | 31 nC |
| 工作结温 | -55 C to +175 C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) |
| Technology | OptiMOS-T (trench) |
| Automotive Qualification | AEC-Q101 |
| RoHS 状态 | Compliant |
IPD30N10S3L34ATMA2 引脚配置
| 引脚 1 | Gate — Gate drive input; 10V V_GS typical for full enhancement |
| 引脚 2 | Drain — Drain terminal; internally connected to the mounting tab |
| 引脚 3 | Source — Source terminal; reference for gate drive |
| 引脚 Tab | Drain — Drain tab (electrically tied to Pin 2); main thermal path and high-current terminal |
安全工作区 (DC)
典型应用
IPD30N10S3L34ATMA2 适用于 6 应用s: Automotive 12V/24V Load Switching, Electric Power Steering (EPS) Motor Drive, DC-DC Converter High-Side / Low-Side Switch, Battery Management System (BMS) Protection, Industrial Solenoid and Relay Driver, Brushed DC Motor Drive (Automotive and Industrial).
Automotive 12V/24V Load Switching
The IPD30N10S3L34ATMA2's 100 V V_DS rating gives substantial margin above nominal 12 V and 24 V automotive bus rails, tolerating load-dump transients up to 40 V without avalanche breakdown. Its 30 A continuous drain current drives high-current resistive and inductive loads such as headlamp ballasts, seat heaters, and HVAC blowers, while the 31 mOhm R_DS(on) keeps conduction loss under 2.5 W at 9 A typical load. AEC-Q101 qualification and -55 C to +175 C junction range ensure reliability in under-hood environments with thermal cycling and vibration stress.
推荐
Electric Power Steering (EPS) Motor Drive
In EPS half-bridge and H-bridge configurations, the IPD30N10S3L34ATMA2 switches the brushless DC motor phase windings with low conduction loss and robust body-diode reverse recovery. The 180 A pulsed current rating handles motor start-up and reverse-current spikes, while the 31 nC total gate charge keeps switching loss manageable at 20-50 kHz PWM frequencies typical of EPS controllers. AEC-Q101 qualification matches the stringent automotive safety integrity level (ASIL) requirements for steering subsystems.
推荐
DC-DC Converter High-Side / Low-Side Switch
The IPD30N10S3L34ATMA2 works as either the high-side or low-side switch in 12 V to 48 V buck and boost converters up to several hundred watts. Its 31 mOhm R_DS(on) at V_GS = 10 V yields low conduction loss, and the 31 nC Qg supports switching frequencies up to 500 kHz, enabling compact inductor and capacitor selection. The PG-TO252-3-11 package provides a thermal pad for direct PCB cooling, which is critical at the 57 W power dissipation rating.
推荐
Battery Management System (BMS) Protection
In BMS disconnect and pre-charge circuits, the IPD30N10S3L34ATMA2 acts as a low-resistance solid-state switch replacing traditional contactors, with 31 mOhm R_DS(on) keeping continuous current path loss low. The 100 V V_DS handles series-cell battery packs up to 36 V nominal, and AEC-Q101 qualification ensures long-term reliability under the temperature swings of battery enclosures. Its fast switching capability supports pre-charge resistor bypass within milliseconds of contactor-closure detection.
推荐
Industrial Solenoid and Relay Driver
The IPD30N10S3L34ATMA2 drives 24 V industrial solenoids, pneumatic valves, and mechanical relays with low-side N-channel switching topology. Its 30 A continuous current easily handles the inrush of large solenoids, while the rugged OptiMOS-T body diode clamps inductive kickback without external freewheeling diodes in many cases. The PG-TO252-3-11 package's tab connection provides both thermal relief and a low-inductance source-return path for fast switching edges.
推荐
Brushed DC Motor Drive (Automotive and Industrial)
For brushed DC motor H-bridges driving window lifts, seat adjusters, fans, pumps, and small industrial drives, the IPD30N10S3L34ATMA2 provides the per-leg switching element with robust avalanche energy absorption. The 180 A pulsed current handles motor stall conditions, while the 31 mOhm R_DS(on) keeps bridge dissipation low for thermal-conscious PCB layouts. The DPAK footprint allows compact bridge designs with all four FETs on a single thermal copper pour, simplifying thermal management.
推荐
推荐产品汇总
工程参考数据： IPD30N10S3L34ATMA2 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IPD30N10S3L34ATMA1 | IPD70N10S312ATMA2 | IPD33CN10NGATMA1 | IPD90N06S407ATMA2 |
|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| V_DS max (V) | 100 V | 100 V | 100 V | 100 V | 60 V |
| Continuous I_D (A) | 30 A | 30 A | 70 A | 33 A | 90 A |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-T (trench) | OptiMOS-T | OptiMOS | OptiMOS | OptiMOS |
关键差异点
- Original ATMA2 packing revision with confirmed availability （对比 IPD30N10S3L34ATMA1)
- OptiMOS-T technology with industry-leading FOM （对比 IPD70N10S312ATMA2)
- AEC-Q101 qualified with extended temperature range （对比 IPD90N06S407ATMA2)
设计说明
Estimated: at I_D = 30 A continuous and R_DS(on) = 31 mOhm, conduction loss is approximately 28 W, exceeding the 57 W P_D rating only at elevated Tc. The PG-TO252-3-11 (DPAK) tab must be soldered to a copper pour of at least 1 square inch (645 mm^2) on a 2 oz copper layer to achieve theta_JA below 50 C/W. Without active cooling, expect practical continuous current ceiling of 15-20 A. Use multiple thermal vias under the tab to spread heat into inner copper planes.
Layout the gate-drive loop (gate resistor -> gate pin -> source pin -> gate-driver ground) as small as physically possible, ideally under 1 nH loop inductance, to prevent gate-rail ringing and dv/dt-induced Miller turn-on. Place a 10-100 kOhm gate-source resistor directly at the gate pin to ensure the MOSFET stays off during controller power-up. Use a 4-layer PCB with a dedicated ground plane below the switching node to minimize parasitic inductance on the drain-source loop.
Do not exceed V_GS = +/-20 V absolute maximum; gate-source ESD damage is a common failure mode when the gate is left floating during handling or hot-plug events. Ensure the gate-drive voltage reaches at least 10 V for full enhancement; partial enhancement at V_GS = 4-6 V dramatically increases R_DS(on) and can cause thermal runaway. For high-side N-channel switching, include a bootstrap or charge-pump supply because the source pin voltage rises above ground when the FET is on.
Keep the switching-node copper area minimal to reduce radiated EMI; however, provide adequate copper for current handling (1 oz copper handles roughly 1 A per mm of trace width with 10 C temperature rise). For half-bridge layouts, interleave high-side and low-side FET drains with a shared thermal copper pour, but keep gate traces separated to avoid cross-conduction. Place bulk input capacitors within 5 mm of the high-side drain to minimize parasitic inductance that causes voltage spikes during switching transitions.
合规信息
AEC-Q101 (automotive) qualified per Infineon product page; RoHS and REACH compliant; MSL level not stated in the verified data and is marked [DATA_NEEDED] in specs.
