IPD30N10S3L34ATMA2 vs IPD30N10S3L34ATMA1 对比
详细并排对比 IPD30N10S3L34ATMA2 出自 Infineon 和 IPD30N10S3L34ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD30N10S3L34ATMA2 | IPD30N10S3L34ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.38 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 工作结温 | -55 C to +175 C | -55°C to +175°C |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (JEDEC J-STD-020, 260°C peak reflow) |
| RoHS 状态 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T2 |
| 晶体管类型 | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 30 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (PD, Tc=25°C) | — | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | — | 31 mΩ @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | — | 23 nC |
| 封装 | — | PG-TO252-3-11 (DPAK-2 / SC-63) |
| RoHS / REACH | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | 100% Avalanche tested |