IPD30N10S3L34ATMA2 vs IPD50P04P413ATMA2 对比
详细并排对比 IPD30N10S3L34ATMA2 出自 Infineon 和 IPD50P04P413ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD30N10S3L34ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.42 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 工作结温 | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS-P2 (Trench) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Polarity / Device Type | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -40 V |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| 工作温度范围 | — | -55 °C to +175 °C |
| 封装 | — | PG-TO252-3-313 (DPAK) |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |