IPD320N20N3GATMA1 vs IRL40S212ARMA1 对比
详细并排对比 IPD320N20N3GATMA1 出自 Infineon 和 IRL40S212ARMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD320N20N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.34 | $2.31 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 | StrongIRFET™ (planar N-channel) |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID, Tc) | 34 A | 195 A |
| Power Dissipation (PD, Tc) | 136 W | 231 W |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| 工作温度范围 | -55 C to +175 C (Tj) | [DATA_NEEDED: Tj max] |
| 封装 | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| JEDEC Qualification | Qualified for target application | — |
| Channel Mode | Enhancement mode | — |
| Gate Threshold Level | Normal level (per datasheet title) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | StrongIRFET™ |
| 晶体管类型 | — | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | — | 1.9 mOhm max |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 等级 | — | 1 (unlimited) |