IPD320N20N3GATMA1 vs IRL40S212ARMA1 Comparison
Detailed side-by-side comparison of IPD320N20N3GATMA1 by Infineon and IRL40S212ARMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 β Active
Specification Comparison
| Parameter | IPD320N20N3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.34 | $2.31 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 3 | StrongIRFETβ’ (planar N-channel) |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID, Tc) | 34 A | 195 A |
| Power Dissipation (PD, Tc) | 136 W | 231 W |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V | β |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | [DATA_NEEDED: Tj max] |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead Plating | Pb-free | β |
| RoHS Compliance | Compliant | β |
| JEDEC Qualification | Qualified for target application | β |
| Channel Mode | Enhancement mode | β |
| Gate Threshold Level | Normal level (per datasheet title) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | StrongIRFETβ’ |
| Transistor Type | β | N-Channel MOSFET |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) | β | 1.9 mOhm max |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| MSL Level | β | 1 (unlimited) |