IPD380P06NMATMA1 vs IPD90N06S407ATMA2 对比
详细并排对比 IPD380P06NMATMA1 出自 Infineon 和 IPD90N06S407ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD380P06NMATMA1 | IPD90N06S407ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.49 | $0.84 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage V(BR)DSS | 60 V | — |
| 连续漏极电流（TC=25°C） | 35 A | — |
| Power Dissipation (Tc) | 125 W | — |
| Technology | OptiMOS P-channel trench | — |
| 封装 | PG-TO252-3 (DPAK), surface mount | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | — |
| Gate Drive | Logic-level compatible | — |
| Avalanche Rated | Yes (per manufacturer datasheet) | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch | — |
| Lead-Free | Yes | — |
| Automotive Qualified | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] | — |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D at T_C) | — | 90 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | — | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | — | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | — | 79 W |
| 工作结温 | — | -55 C to +175 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Yes (Green Product) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 Qualified |
| Avalanche Rating | — | 100% Avalanche Tested |