IPD50P04P4L11ATMA2 vs IRFR5410TRRPBF 对比
详细并排对比 IPD50P04P4L11ATMA2 出自 Infineon 和 IRFR5410TRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD50P04P4L11ATMA2 | IRFR5410TRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.49 |
| 晶体管类型 | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| 工作结温 | -55 °C to +175 °C | -55C to +150C |
| 封装 | PG-TO252-3-313 (DPAK), surface mount | TO-252AA (DPAK) |
| 引脚数量 | 3 (Drain / Tab / Source / Gate) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Polarity | — | P-Channel |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| Technology | — | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |