IPD50P04P4L11ATMA2 vs IRFR5410TRRPBF 比較
詳細な並列比較: IPD50P04P4L11ATMA2 メーカー: Infineon および IRFR5410TRRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD50P04P4L11ATMA2 | IRFR5410TRRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.82 | $0.49 |
| トランジスタタイプ | P-Channel MOSFET, enhancement mode | — |
| Drain-Source Voltage VDS | -40 V | — |
| Continuous Drain Current ID (TC = 25 °C) | -50 A | — |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical | — |
| Typical Gate Charge Qg | 45 nC | — |
| Power Dissipation PD (TC = 25 °C) | 58 W | — |
| 動作接合温度 | -55 °C to +175 °C | -55C to +150C |
| パッケージ | PG-TO252-3-313 (DPAK), surface mount | TO-252AA (DPAK) |
| ピン数 | 3 (Drain / Tab / Source / Gate) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| Polarity | — | P-Channel |
| FET Type | — | MOSFET (Metal Oxide Semiconductor) |
| Technology | — | HEXFET (5th Generation) |
| VDS (Drain-Source Voltage) | — | -100 V |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Gate Threshold) | — | -2 V to -4 V |
| Continuous Drain Current (ID) at Tc=25C | — | -13 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at 100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=-10V | — | 205 mΩ |
| RDS(on) typical at VGS=-10V | — | 26 mΩ (per Mouser listing for IRFR5410TRPBF) |
| Total Gate Charge (Qg) | — | 70 nC |
| Power Dissipation (Pd) at Tc=25C | — | 66 W |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |