IPD50R380CEAUMA1 vs IPD60R385CPATMA1 对比
详细并排对比 IPD50R380CEAUMA1 出自 Infineon 和 IPD60R385CPATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ 量产中
规格对比
| 参数 | IPD50R380CEAUMA1 | IPD60R385CPATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.34 | $0.42 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | 600 V |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| 工作结温 | -55C to +150C | -55 °C to +150 °C |
| Technology | CoolMOS CE (super-junction) | — |
| Channel Type | N-Channel | — |
| 封装 | PG-TO252-3 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ CP (5th generation) |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on)) | — | 385 mΩ (typ, VGS = 10 V) |
| Continuous Drain Current (ID) at TC=25°C | — | 9 A |
| Pulsed Drain Current (IDM) | — | 27 A |
| Power Dissipation (PD) at TC=25°C | — | 83 W |
| Gate Charge (Qg) | — | 18 nC (typ) |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 引脚数量 | — | 3 (Gate, Drain, Source; tab = Drain) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |