IPD50R380CEAUMA1 vs IPD60R385CPATMA1 Comparison

Detailed side-by-side comparison of IPD50R380CEAUMA1 by Infineon and IPD60R385CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50R380CEAUMA1 IPD60R385CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (V(BR)DSS) 500 V 600 V
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
Operating Junction Temperature -55C to +150C -55 °C to +150 °C
Technology CoolMOS CE (super-junction) —
Channel Type N-Channel —
Package PG-TO252-3 (DPAK) —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Series — CoolMOS™ CP (5th generation)
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on)) — 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C — 9 A
Pulsed Drain Current (IDM) — 27 A
Power Dissipation (PD) at TC=25°C — 83 W
Gate Charge (Qg) — 18 nC (typ)
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Package / Case — PG-TO252-3 (DPAK)
Pin Count — 3 (Gate, Drain, Source; tab = Drain)
MSL Level — 1 (per JEDEC J-STD-020)

Datasheets & Resources

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