IPD60N10S412ATMA1 vs IPD50N06S409ATMA2 对比
详细并排对比 IPD60N10S412ATMA1 出自 Infineon 和 IPD50N06S409ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD60N10S412ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD60N10S412ATMA1 | — |
| 晶体管类型 | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| 工作结温 | -55 C to +175 C | -55 °C to +175 °C |
| 封装 | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 + Tab) | 3 (2 + Tab) |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| RoHS 状态 | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| 无卤 | Yes (per Infineon definition) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |