IPD60R145CFD7ATMA1 vs IPD80R1K4P7ATMA1 对比

详细并排对比 IPD60R145CFD7ATMA1 出自 Infineon 和 IPD80R1K4P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ 量产中

规格对比

参数 IPD60R145CFD7ATMA1 IPD80R1K4P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $0.62
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) N-Channel Superjunction
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
封装 TO-252AA (DPAK) surface mount PG-TO252-2 (DPAK)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) Integrated, fast recovery
工作温度 -55C to +150C (junction) —
安装类型 Surface Mount (DPAK, 3-pin + tab) Surface Mount
引脚数量 3 (Gate, Drain, Source) 3 (Gate, Drain/Tab, Source)
Series CoolMOS CFD7 CoolMOS P7
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID) at Tc=25C — 4 A
On-Resistance (RDS(on)) typ/max — 1.2 ohm typ / 1.4 ohm max
Gate Threshold Voltage (VGS(th)) — 3.5 V (typ)
Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
功耗(Ptot) — 32 W
工作结温 — -55C to +150C
REACH Status — Compliant
Avalanche Energy Rated — Yes

数据手册与资源

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