IPD60R210PFD7SAUMA1 vs IPD60R600P7ATMA1 对比

详细并排对比 IPD60R210PFD7SAUMA1 出自 Infineon 和 IPD60R600P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 量产中
Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ 量产中

规格对比

参数 IPD60R210PFD7SAUMA1 IPD60R600P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
安装类型 Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
工作温度范围 -55C to +150C (TJ) -55C to +150C (TJ)
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Part Number — IPD60R600P7ATMA1
Series — CoolMOS P7
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
封装 / 外壳 — PG-TO252-3 (DPAK), surface mount
MSL 等级 — 1 (per JEDEC J-STD-020)
RoHS 状态 — Compliant
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

数据手册与资源

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