IPD60R210PFD7SAUMA1 vs IPN60R2K0PFD7SATMA1 对比

详细并排对比 IPD60R210PFD7SAUMA1 出自 Infineon 和 IPN60R2K0PFD7SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon

IPD60R210PFD7SAUMA1 ✓ 量产中
Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ 量产中

规格对比

参数 IPD60R210PFD7SAUMA1 IPN60R2K0PFD7SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.28
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS superjunction
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
安装类型 Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
工作温度范围 -55C to +150C (TJ) [DATA_NEEDED: operating temperature range]
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Product Series — CoolMOS PFD7
Channel Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 3.8 nC @ 10 V (per UTMel listing)
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)
封装 — PG-SOT223-3-1 (SOT-223)
MSL 等级 — [DATA_NEEDED: MSL level]
RoHS 状态 — Compliant (per Newark listing)

数据手册与资源

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