IPD60R210PFD7SAUMA1 vs IPN60R2K0PFD7SATMA1 비교

다음의 상세 나란히 비교: IPD60R210PFD7SAUMA1 제조: Infineon 및 IPN60R2K0PFD7SATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ 활성

사양 비교

파라미터 IPD60R210PFD7SAUMA1 IPN60R2K0PFD7SATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.54 $0.28
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS PFD7 —
Technology Superjunction (CoolMOS) N-Channel Power MOSFET CoolMOS superjunction
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc) 16 A —
On-Resistance (RDS(on), max) 210 mOhm —
Power Dissipation (Ptot, Tc=25C) 64 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Package Type TO-252 (DPAK) —
Manufacturer Package Designator PG-TO252-3-344 —
실장 유형 Surface Mount (SMT) Surface Mount
Pin Configuration 3-Pin (2+Tab) - Gate, Drain (tab), Source —
동작 온도 범위 -55C to +150C (TJ) [DATA_NEEDED: operating temperature range]
Lead-Free / RoHS Yes (compliant) —
Application Segment Consumer-grade SMPS —
Product Series — CoolMOS PFD7
Channel Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 3.8 nC @ 10 V (per UTMel listing)
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)
패키지 — PG-SOT223-3-1 (SOT-223)
MSL 레벨 — [DATA_NEEDED: MSL level]
RoHS 상태 — Compliant (per Newark listing)

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청