IPD60R2K0PFD7SAUMA1 vs BSC076N04NDATMA1 对比
详细并排对比 IPD60R2K0PFD7SAUMA1 出自 Infineon 和 BSC076N04NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
IPD60R2K0PFD7SAUMA1 ✓ 量产中
规格对比
| 参数 | IPD60R2K0PFD7SAUMA1 | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.35 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | OptiMOS 3 |
| Technology | Superjunction N-Channel MOSFET | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) at T_C | 3 A | — |
| Power Dissipation (P_D) at T_C | 20 W | — |
| R_DS(on) at V_GS = 10 V | 2000 milliohm (typ) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| 封装 | PG-TO252-3-344 (DPAK) | — |
| 引脚数量 | 3 (Gate, Drain, Source) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | — |
| 湿敏等级（MSL） | MSL2 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Standard Pack Quantity | 2500 pcs / 13-inch reel | — |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 工作结温 | — | -55 C to +175 C |
| 封装 / 外壳 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |