IPD60R2K0PFD7SAUMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPD60R2K0PFD7SAUMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R2K0PFD7SAUMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS PFD7 OptiMOS 3
Technology Superjunction N-Channel MOSFET Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) at T_C 3 A —
Power Dissipation (P_D) at T_C 20 W —
R_DS(on) at V_GS = 10 V 2000 milliohm (typ) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Package PG-TO252-3-344 (DPAK) —
Pin Count 3 (Gate, Drain, Source) —
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) —
Moisture Sensitivity Level (MSL) MSL2 (per JEDEC J-STD-020) —
RoHS Compliance Compliant —
Standard Pack Quantity 2500 pcs / 13-inch reel —
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Operating Junction Temperature — -55 C to +175 C
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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