IPD70N10S3L12ATMA2 vs ISC045N03L5SATMA1 对比
详细并排对比 IPD70N10S3L12ATMA2 出自 Infineon 和 ISC045N03L5SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD70N10S3L12ATMA2 | ISC045N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.86 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD70N10S3L12ATMA2 | ISC045N03L5SATMA1 |
| Technology | OptiMOS-T (N-Channel Trench MOSFET) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at TC | 70 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| On-State Resistance R_DS(on) typ @ VGS=10V | 11.5 mOhm | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD at TC | 125 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TO252-3-11 (DPAK) | SuperSO8 5x6 (PG-TDSON-8-6) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| 工作温度范围 | — | -55 °C to +150 °C |