IPD80R1K4P7ATMA1 vs IPD60R145CFD7ATMA1 对比

详细并排对比 IPD80R1K4P7ATMA1 出自 Infineon 和 IPD60R145CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ 量产中

规格对比

参数 IPD80R1K4P7ATMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $1.05
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS CFD7
Technology N-Channel Superjunction CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
功耗(Ptot) 32 W —
工作结温 -55C to +150C —
封装 PG-TO252-2 (DPAK) TO-252AA (DPAK) surface mount
安装类型 Surface Mount Surface Mount (DPAK, 3-pin + tab)
引脚数量 3 (Gate, Drain/Tab, Source) 3 (Gate, Drain, Source)
RoHS 状态 Compliant Compliant
REACH Status Compliant —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery Integrated fast body diode (low Q<sub>rr</sub>)
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
工作温度 — -55C to +150C (junction)
Target Application — ZVS / LLC resonant converters, soft switching

数据手册与资源

浏览全部产品 创建 BOM 获取报价