IPD80R600P7ATMA1 vs IPD80R750P7ATMA1 对比
详细并排对比 IPD80R600P7ATMA1 出自 Infineon 和 IPD80R750P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R600P7ATMA1 | IPD80R750P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.42 |
| Drain-Source Voltage (VDS) | 800 V | 800 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | — |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | 3.5 V (typical) |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| 工作温度范围 | -55 C to +150 C | — |
| 封装 | PG-TO252-3 (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS (Super-Junction) |
| Polarity | N-Channel | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Part Number | — | IPD80R750P7ATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 7 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 750 mOhm |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at TC=25C | — | 51 W |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK) |
| 工作温度 | — | -55C to +150C (TJ) |
| Gate Protection | — | Integrated Zener (ESD protected) |
| Packaging | — | Tape & Reel (ATMA1) |
| RoHS 状态 | — | Compliant |