IPG20N04S4L08AATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IPG20N04S4L08AATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ 量产中

规格对比

参数 IPG20N04S4L08AATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.86
FET Type Dual N-Channel —
Technology OptiMOS-T2 (Logic Level) Trench N-Channel MOSFET
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
工作结温 -55°C to +175°C —
封装 PG-TDSON-8-10 (Wettable Flank) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
AEC-Q101 Qualification Yes —
Peak Reflow Temperature 260°C —
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) —
AOI Compatible Yes (Wettable Flank) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
工作温度范围 — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
RoHS 状态 — Compliant
MSL 等级 — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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