IPG20N04S4L08AATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IPG20N04S4L08AATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΞ© MOSFET | Infineon
IPG20N04S4L08AATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N04S4L08AATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.86 |
| FET Type | Dual N-Channel | β |
| Technology | OptiMOS-T2 (Logic Level) | Trench N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 20 A (per channel) | β |
| On-Resistance R<sub>DS(on)</sub> max @ VGS=10V | 8.2 mΞ© | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> typ | 1.7 V | β |
| Gate Drive (Logic Level) | 4.5 V | β |
| Power Dissipation (PD) @ TC=25Β°C | 54 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| AEC-Q101 Qualification | Yes | β |
| Peak Reflow Temperature | 260Β°C | β |
| Avalanche Rated | Yes (100% tested) | β |
| RoHS / REACH | Compliant (Green Product) | β |
| AOI Compatible | Yes (Wettable Flank) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |