IPG20N04S4L08AATMA1 vs IPC50N04S5L5R5ATMA1 对比

详细并排对比 IPG20N04S4L08AATMA1 出自 Infineon 和 IPC50N04S5L5R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ 量产中
Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 量产中

规格对比

参数 IPG20N04S4L08AATMA1 IPC50N04S5L5R5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.66 $0.36
FET Type Dual N-Channel —
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
工作结温 -55°C to +175°C —
封装 PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
AEC-Q101 Qualification Yes Qualified (automotive grade)
Peak Reflow Temperature 260°C 260 °C
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) RoHS Compliant (Green Product)
AOI Compatible Yes (Wettable Flank) —
晶体管类型 — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
工作温度范围 — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested

数据手册与资源

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