IPG20N04S4L08ATMA1 vs IPG20N06S4L14AATMA1 对比
详细并排对比 IPG20N04S4L08ATMA1 出自 Infineon 和 IPG20N06S4L14AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ 量产中规格对比
| 参数 | IPG20N04S4L08ATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N04S4L08ATMA1 | IPG20N06S4L14AATMA1 |
| FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| 工作温度 | -55°C to +175°C | — |
| 封装 / 外壳 | PG-TDSON-8-4 (TDSON-8) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | — |
| Avalanche Tested | 100% Avalanche Tested | 100% (per datasheet) |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| 工作温度范围 | — | -55°C to +175°C (junction) |
| 封装 | — | PG-TDSON-8-10 (Wettable Flank) |
| Automotive Qualification | — | AEC-Q101 |
| Peak Reflow Temperature | — | 260°C |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| AOI Compatible | — | Yes (Wettable Flank) |
| Technology | — | OptiMOS™ Trench |