IPG20N06S4L14AATMA1 vs BSC076N06NS3GATMA1 对比

详细并排对比 IPG20N06S4L14AATMA1 出自 Infineon 和 BSC076N06NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 量产中
Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 量产中

规格对比

参数 IPG20N06S4L14AATMA1 BSC076N06NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 —
FET Type 2 N-Channel (Dual) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) —
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
工作温度范围 -55°C to +175°C (junction) -55C to +150C
封装 PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-5 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) —
RoHS Compliance Green Product (RoHS compliant) Compliant
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench N-Channel Trench MOSFET
Product Family — OptiMOS 3
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 69 W
MSL 等级 — 1 (unlimited)
无卤 — Yes (per Infineon product page)

数据手册与资源

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