IPL60R065C7AUMA1 vs IPB60R040CFD7ATMA1 对比
详细并排对比 IPL60R065C7AUMA1 出自 Infineon 和 IPB60R040CFD7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPL60R065C7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.95 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Process Technology | CoolMOS C7 (Superjunction) | — |
| Maximum Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A | — |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ | — |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W | — |
| Gate-Source Voltage (V_GS, max) | ±20 V | — |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | — |
| 封装 / 外壳 | PG-VSON-4-1 (Source-Down) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C (T_J) | -55°C to +150°C |
| RoHS 状态 | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | — |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | — |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | — |
| Product Family | — | CoolMOS CFD7 |
| Technology | — | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功耗（TC=25°C） | — | 227 W |
| 封装 | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL 等级 | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |