IPL60R065C7AUMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R065C7AUMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065C7AUMA1
IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΞ© N-Ch MOSFET | Infineon
IPL60R065C7AUMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065C7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Process Technology | CoolMOS C7 (Superjunction) | β |
| Maximum Drain-Source Voltage (V_DS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 29 A | β |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΞ© | β |
| Maximum Power Dissipation (P_D, T_C=25Β°C) | 180 W | β |
| Gate-Source Voltage (V_GS, max) | Β±20 V | β |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | β |
| Package / Case | PG-VSON-4-1 (Source-Down) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_J) | -55Β°C to +150Β°C |
| RoHS Status | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | β |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | β |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | β |
| Product Family | β | CoolMOS CFD7 |
| Technology | β | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Package | β | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL Level | β | 1 |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |